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Product Detailed Parameters
- Description：IGBT PT 900V 117A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：117 A
- Current - Collector Pulsed (Icm)：193 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 38A
- Power - Max：500 W
- Switching Energy：1192µJ (on), 1088µJ (off)
- Input Type：Standard
- Gate Charge：162 nC
- Td (on/off) @ 25°C：18ns/131ns
- Test Condition：600V, 38A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT64GA90B2D30 is a single Power MOS 8 IGBT manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-264-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current of 117 A at 25°C. Key electrical parameters include a gate-emitter voltage limit of ±20 V, a power dissipation rating of 500 W, and a collector-emitter saturation voltage of 2.5 V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates Power MOS 8 technology for optimized switching performance.
- Designed for high-current applications with a 117 A continuous collector current rating.
- Provides robust thermal management capabilities with a 500 W power dissipation capacity.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix 'B2' against official Microchip documentation to confirm pinout or variant differences compared to standard models. Ensure compatibility with existing PCB footprints for the TO-264-3 package before procurement. Confirm RoHS compliance status directly from the manufacturer's datasheet.
Selection Notes
Select this component when a 900 V silicon IGBT with high current handling is required. Compare the 117 A rating and 2.5 V saturation voltage against system requirements. Consider the TO-264-3 package size for thermal design constraints relative to alternative packages like TO-247.
Part Context
This part belongs to the Microchip Power MOS 8 IGBT family, which combines MOS gate drive with IGBT output characteristics. The series offers improved switching speed and lower conduction losses compared to previous generations, targeting efficient power conversion in industrial and consumer applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify direct replacements only through official Microchip cross-reference tools or updated datasheets.
