APT64GA90B2SC30

Description：IGBT PT MOS 8 COMBI 900 V 64 A T
Series：-

SKU:f6a30d422594 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT MOS 8 COMBI 900 V 64 A T
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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APT64GA90B2SC30

Overview

The APT64GA90B2SC30 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and belongs to the POWER MOS 8 Combi series. The device features a TO-264-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 900 V and a continuous collector current of 117 A at 25°C. The saturation voltage is specified at 2.5 V, with a maximum gate-emitter voltage range of -20 V to +20 V. Power dissipation reaches 500 W, and the component operates within a temperature range of -55°C to +150°C.

Feature Summary

Integrates IGBT and anti-parallel Fast Recovery Diode in a single module configuration.
Utilizes POWER MOS 8 Combi technology for optimized switching performance.
Designed for high-power applications requiring robust thermal management.

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency inverters

Procurement Notes

Verify the exact part number suffix against official Microchip documentation, as variations such as LD30 or B2SC30 may indicate different packaging or specific manufacturing lot attributes. Confirm RoHS compliance status directly from the manufacturer's datasheet before procurement. Ensure the supplier provides valid traceability documents for this semiconductor component.

Selection Notes

Select this component based on its 900 V blocking capability and 117 A current rating suitable for medium-to-high power conversion. Consider the TO-264-3 package size for thermal interface compatibility. Compare the 2.5 V saturation voltage against system efficiency requirements. Verify that the gate drive voltage limits align with the -20 V to +20 V specification.

Part Context

This part belongs to Microchip's POWER MOS 8 Combi family, which combines IGBTs with fast recovery diodes. These devices are engineered for hard-switching applications. The TO-264-3 package offers higher current handling compared to standard TO-220 variants. This family targets industrial and renewable energy systems requiring reliable high-voltage switching.

Replacement Considerations

Publicly confirmed substitute part numbers for APT64GA90B90B2SC30 are not available in the provided reference data. Cross-referencing requires matching 900 V, 117 A, TO-264-3 specifications with equivalent SiC or Si technologies from other manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.