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Product Detailed Parameters
- Description：IGBT PT 900V 117A TO264
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：117 A
- Current - Collector Pulsed (Icm)：193 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 38A
- Power - Max：500 W
- Switching Energy：1192µJ (on), 1088µJ (off)
- Input Type：Standard
- Gate Charge：162 nC
- Td (on/off) @ 25°C：18ns/131ns
- Test Condition：600V, 38A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 [L]
- Grade：-
- Qualification：-
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Overview
The APT64GA90LD30 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 8 Combi family, manufactured by Microchip Technology. It utilizes PT (Punch-Through) technology and is housed in a TO-264-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 900 V and a continuous collector current of 117 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 500 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates an IGBT with an anti-parallel Fast Recovery Epitaxial Dioid (FRED) in a single module configuration.
- Utilizes Punch-Through (PT) technology to optimize switching performance and conduction losses.
- Features the POWER MOS 8 Combi architecture for improved ruggedness and thermal stability.
Applications
- Industrial motor drives and inverters
- Uninterruptible Power Supplies (UPS)
- High-frequency induction heating systems
Procurement Notes
Verify the specific suffix 'D30' against the official Microchip datasheet to confirm the exact packaging type and compliance status. Ensure that the TO-264-3 footprint matches the target PCB design requirements. Confirm RoHS and REACH SVHC declarations are up to date with the current manufacturing batch before finalizing procurement specifications.
Selection Notes
Select this component when a high-current single switch with integrated freewheeling diode is required in a TO-264 form factor. The 900 V rating suits medium-voltage industrial applications. Compare the 117 A continuous current and 500 W dissipation limits against the system's thermal management capabilities to ensure safe operating area compliance under peak load conditions.
Part Context
This part belongs to the APT series of discrete power semiconductors produced by Microchip Technology, formerly known as Advanced Power Technology. The APT64GA90LD30 represents a specific variant within the 900 V class, designed for robust performance in demanding power conversion environments where space efficiency and switching speed are critical design constraints.
Replacement Considerations
Direct pin-compatible substitutes may include other 900 V IGBTs in TO-264 packages from the same manufacturer, such as the APT60GA90 or APT75GA90 series, provided their current ratings and saturation voltages meet the application's electrical requirements. Verify functional equivalence carefully.
