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Product Detailed Parameters
- Description：IGBT PT 600V 100A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 65A
- Power - Max：833 W
- Switching Energy：605µJ (on), 896µJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：30ns/91ns
- Test Condition：400V, 65A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT65GP60B2G is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes PT MOS 7 technology and is housed in a TO-247 MAX package for through-hole mounting. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation capacity of 833 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single IGBT configuration utilizing PT MOS 7 technology
- High thermal performance with 833 W power dissipation capability
- Robust mechanical design in TO-247 MAX through-hole package
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical characteristics and packaging details. Ensure that any alternative part numbers are cross-referenced with the manufacturer's current product change notifications to guarantee functional equivalence and compliance with RoHS standards before procurement.
Selection Notes
Select this component for applications requiring a 600 V rated single IGBT with high current handling capabilities. The TO-247 MAX package provides superior thermal management compared to standard TO-247 packages. Consider the 2.2 V saturation voltage when designing for efficiency, and ensure the gate drive circuit supports the specified ±20 V limits.
Part Context
This component belongs to the APT series of discrete IGBTs from Microchip Technology. It is designed for general-purpose switching applications where reliability and thermal performance are critical. The TO-247 MAX package distinguishes it from lower-power variants by offering enhanced heat dissipation properties suitable for higher power densities.
Replacement Considerations
Consult Microchip's official substitution guide for verified alternatives. Generic replacements may differ in saturation voltage or thermal resistance.
