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Product Detailed Parameters
- Description：IGBT NPT 650V 134A TMAX
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：134 A
- Current - Collector Pulsed (Icm)：260 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 70A
- Power - Max：595 W
- Switching Energy：-
- Input Type：-
- Gate Charge：305 nC
- Td (on/off) @ 25°C：19ns/170ns
- Test Condition：433V, 70A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：T-MAX™ [B2]
- Grade：-
- Qualification：-
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Overview
The APT70GR65B2SCD30 is a high-power Insulated Gate Bipolar Transistor (IGBT) with an integrated Schottky diode, manufactured by Microsemi Corporation. It features a NPT (Non-Punch-Through) technology design optimized for robust performance in demanding power conversion applications. The device is rated for a maximum collector-emitter voltage of 650V and a continuous collector current of 70A. Key electrical characteristics include a gate charge of 305 nC and a pulsed collector current capability of 260A. The component is housed in a T-MAX package and complies with RoHS standards, ensuring lead-free construction.
Feature Summary
- Integrates an IGBT with a fast-recovery anti-parallel Schottky diode for efficient switching
- Utilizes Non-Punch-Through (NPT) technology for enhanced ruggedness and thermal stability
- Designed for high-current applications with a 260A pulsed collector current rating
Applications
- Industrial motor drives and inverters
- Uninterruptible Power Supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific manufacturer source, as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm that the component meets current environmental compliance requirements and check for any updated datasheets or replacement notices from the successor entity to ensure long-term supply chain reliability.
Selection Notes
Select this component for applications requiring high voltage blocking and significant current handling capabilities. The integrated Schottky diode reduces reverse recovery losses compared to standard fast-recovery diodes. Ensure the thermal management system can handle the power dissipation associated with a 70A continuous current rating in the specified package.
Part Context
This part belongs to the T-MAX series of power modules, which are designed for high-efficiency power electronics. The product line was discontinued by Microsemi Corporation in October 2017, as indicated in public discontinuance notices. Consequently, it is now managed under Microchip Technology's portfolio, representing a transition in manufacturing and support structures for legacy high-power discrete devices.
