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The APT75GN60BDQ2G is a single IGBT from Microchip Technology, utilizing Trench Field Stop technology. It features a maximum collector-emitter voltage of 600 V and is housed in a TO-247-3 package. The device supports a continuous collector current of 155 A at 25°C and handles up to 93 A under other conditions. Power dissipation reaches 536 W, with an operating temperature range spanning -55°C to +175°C.
Verify the specific datasheet version and ordering suffixes when sourcing. Confirm that the TO-247-3 package matches your thermal management requirements. Ensure compatibility with gate drive voltages specified in the official documentation before integration into your circuit design.
Select this component for applications requiring robust 600 V blocking capability and high current handling. The Trench Field Stop architecture offers advantages in switching efficiency compared to standard plans. Consider the 536 W power dissipation rating for heatsink sizing and thermal interface material selection.
This part belongs to Microchip's discrete IGBT portfolio, specifically the low-frequency single configuration series. It complements complementary diodes like the APT75DA60T1G in half-bridge configurations. The TO-247-3 form factor provides a balance between power density and ease of mounting in industrial equipment.
Direct replacements include the APT75GN60SDQ2G within the same product family. Verify pinout compatibility and exact electrical parameters against the target application requirements before substituting.