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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 155A D3PAK
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：155 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 75A
- Power - Max：536 W
- Switching Energy：2.5mJ (on), 2.14mJ (off)
- Input Type：Standard
- Gate Charge：485 nC
- Td (on/off) @ 25°C：47ns/385ns
- Test Condition：400V, 75A, 1Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：D3PAK
- Grade：-
- Qualification：-
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Overview
The APT75GN60SDQ2G is a single IGBT from Microchip Technology, utilizing Trench Field Stop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 93 A in the D3PAK package. The device supports a pulsed collector current of 225 A and has a power dissipation rating of 536 W. The maximum gate-emitter voltage is ±30 V, with a maximum operating temperature of +175 °C.
Feature Summary
- Trench Field Stop technology for optimized switching performance
- Low frequency Combi design suitable for industrial applications
- High thermal stability with a maximum junction temperature of 175 °C
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific datasheet version to confirm electrical characteristics match application requirements. Ensure the D3PAK surface mount footprint aligns with PCB layout constraints. Confirm RoHS compliance status if required by project specifications. Cross-reference pinout details against assembly documentation to prevent installation errors during manufacturing processes.
Selection Notes
Select this component for applications requiring robust 600 V blocking capability and high current handling up to 93 A. The Trench Field Stop architecture offers improved switching efficiency compared to older technologies. Consider the D3PAK package for surface mount integration where space efficiency is critical. Evaluate thermal management solutions given the 536 W power dissipation rating to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to Microchip's APT series of discrete IGBTs, designed for medium-power switching applications. The SDQ2G suffix indicates a specific variant within the low-frequency Combi family, optimized for durability and performance in demanding environments. It complements other devices in the lineup offering similar voltage ratings but different packaging or current capabilities.
Replacement Considerations
Direct substitutes may include other 600 V, 75 A class IGBTs in D3PAK packages from Microchip or other manufacturers. Verify that alternative components meet or exceed the 93 A continuous current and 536 W power dissipation requirements. Check compatibility with existing gate drive circuits regarding the ±30 V gate-emitter voltage specification.
