APT80GA90B2SC50

Description：IGBT PT MOS 8 COMBI 900 V 80 A T
Series：-

SKU:e8887b8b350e Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT MOS 8 COMBI 900 V 80 A T
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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APT80GA90B2SC50

Overview

The APT80GA90B2SC50 is a Power Trench IGBT manufactured by Microchip Technology, housed in a TO-247 MAX package. It features a 900 V collector-emitter breakdown voltage and an 80 A continuous collector current rating. The device supports a peak collector pulse current of 130 A and dissipates up to 625 W of power. Key electrical characteristics include a maximum on-state voltage of 3.1 V at 47 A with a 15 V gate drive, a total gate charge of 200 nC, and switching times of 18 ns (turn-on) and 149 ns (turn-off). It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Utilizes Power Trench technology for optimized conduction and switching performance.
Designed with MOS 8 Combi architecture for enhanced ruggedness and reliability.
Features a TO-247 MAX package providing superior thermal dissipation capabilities.

Applications

Industrial motor drives
Switched-mode power supplies
Inverter circuits

Procurement Notes

Verify the specific suffix '2SC50' against official Microchip documentation to confirm reel quantity and tape specifications. Ensure compatibility with TO-247 MAX footprints rather than standard TO-247 designs. Cross-reference datasheet parameters for critical thermal and electrical requirements before integration.

Selection Notes

Select this component for high-voltage applications requiring robust switching characteristics. The 900 V rating suits industrial systems, while the TO-247 MAX package facilitates efficient heat management. Evaluate gate charge and switching speeds against system efficiency targets.

Part Context

This part belongs to Microchip's Power Trench IGBT family, combining trench gate technology with MOS control. The TO-247 MAX package offers improved thermal performance compared to traditional through-hole packages, supporting higher power densities in compact designs.

Replacement Considerations

Direct substitutes may include other 900 V, 80 A IGBTs in TO-247 MAX packages from Microchip or compatible manufacturers. Verify pinout compatibility and thermal resistance values when considering alternatives.