APT85GR120J

Overview

The APT85GR120J is a single N-channel IGBT module manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 116 A at 25°C. The device has a collector-emitter saturation voltage of 3.5 V and a power dissipation rating of 595 W. It operates within a temperature range of -55°C to +150°C and utilizes an SOT-227 package with screw mount installation.

Feature Summary

• Single configuration with built-in diode
• NPT technology for robust switching performance
• SOT-227 package design for chassis mounting

Applications

• Industrial motor drives
• Power supply inverters
• Welding equipment

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official Microchip Technology documentation before integration. Confirm that the SOT-227 package dimensions and thermal resistance values match the target heatsink design requirements. Ensure the gate drive voltage limits are respected to prevent device damage during operation.

Selection Notes

Select this component when high voltage blocking capability and significant current handling are required in a single-module form factor. The SOT-227 package offers a balance between power density and thermal management simplicity. Consider the 3.5 V saturation voltage impact on conduction losses relative to the application's efficiency targets.

Part Context

This part belongs to the Microchip Technology IGBT module family, specifically designed for medium-power applications. It represents a standard discrete IGBT solution using NPT technology, providing reliable switching characteristics for industrial environments requiring high voltage isolation and thermal stability.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.