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Product Detailed Parameters
- Description：IGBT NPT 650V 208A TMAX
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：208 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 95A
- Power - Max：892 W
- Switching Energy：3.12mJ (on), 2.55mJ (off)
- Input Type：Standard
- Gate Charge：420 nC
- Td (on/off) @ 25°C：29ns/226ns
- Test Condition：433V, 95A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：T-MAX™ [B2]
- Grade：-
- Qualification：-
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Overview
The APT95GR65B2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 208 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.6 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 892 W. The unit operates within a temperature range of -55°C to +150°C.
Feature Summary
- High current handling capability with 208 A continuous collector current rating
- Robust thermal performance supporting up to 892 W power dissipation
- Designed for high-voltage applications with 650 V blocking capability
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology before procurement. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements. Ensure that the thermal management system can handle the specified 892 W dissipation under actual operating conditions to maintain junction temperatures within the safe operating area.
Selection Notes
Select this component when a single IGBT configuration is required for high-power switching applications. The 650 V rating suits medium-voltage systems, while the 208 A current capacity supports heavy loads. Compare the 2.6 V saturation voltage against alternative devices to evaluate conduction losses. Consider the TO-247-3 package for through-hole mounting if surface-mount options are not feasible for the mechanical design.
Part Context
This part belongs to the APT series of IGBTs from Microchip Technology, which focuses on high-performance power switching solutions. The TO-247-3 package is a standard industry form factor for high-current discrete semiconductors. The 'B2' suffix typically denotes specific internal cell architecture or packaging variations within the manufacturer's portfolio.
Replacement Considerations
Check for direct substitutes such as the APT65GP60B2G, noting its lower 600 V rating and different current specifications. Verify pinout compatibility and thermal resistance values when considering any cross-replacement to ensure circuit integrity.
