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Product Detailed Parameters
- Description：MOSFET 2N-CH 600V 95A SP4
- Series：CoolMOS™
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：600V
- Current - Continuous Drain (Id) @ 25°C：95A
- Rds On (Max) @ Id, Vgs：24mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：14400pF @ 25V
- Power - Max：462W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Grade：-
- Qualification：-
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Overview
The APTC60AM24SCTG is a silicon-based Super Junction MOSFET power module manufactured by Microchip Technology. It features a phase leg configuration with integrated series and Silicon Carbide (SiC) parallel diodes. The component utilizes Si technology and is supplied in a tube package. It belongs to the PM-MOSFET-COOLMOS-SP1 product family, designed for high-performance power switching applications requiring robust thermal and electrical characteristics.
Feature Summary
- Integrates a Super Junction MOSFET phase leg with a parallel SiC diode for enhanced switching performance.
- Utilizes silicon technology within a discrete semiconductor module format.
- Designed for high-efficiency power conversion with low conduction losses.
Applications
- High-frequency power supply designs
- Industrial motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix 'SCTG' against the official Microchip datasheet to confirm the exact pinout and thermal interface specifications. Ensure compatibility with existing PCB footprints and cooling solutions. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through the latest product change notifications.
Selection Notes
Select this module when a combined MOSFET and SiC diode solution is required in a single package to reduce parasitic inductance. Consider the thermal resistance and voltage ratings relative to the system's peak operating conditions. Evaluate the trade-off between the Super Junction MOSFET efficiency and the cost compared to discrete component assemblies. Ensure the application environment supports the specified operating temperature range.
Part Context
This component is part of Microchip's Advanced Power Technologies portfolio, specifically the CoolMOS SP1 series. It represents a transition from traditional MOSFETs to Super Junction technology for improved efficiency. The integration of SiC diodes addresses reverse recovery issues common in standard fast recovery diodes, making it suitable for modern high-density power electronics.
FAQ
What type of diode is integrated with the MOSFET in this module?
The module integrates a Silicon Carbide (SiC) parallel diode alongside the Super Junction MOSFET.
Is the APTC60AM24SCTG a single or dual device?
It is configured as a phase leg, which typically consists of one high-side and one low-side switch structure within the module.
What is the primary semiconductor material used?
The MOSFET component uses silicon (Si) technology, while the parallel diode uses silicon carbide (SiC).
