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The APTC60DSKM24T3G is a dual N-channel CoolMOS SP3F power module manufactured by Microchip Technology. It features a silicon SJ-MOSFET technology housed in an SP-3 chassis mount package. The device provides a drain-source breakdown voltage of 600V and a continuous drain current of 95A. With a maximum on-state resistance of 24mΩ, it supports a pulsed drain current of 260A. The module dissipates up to 462W of power and operates within a temperature range of -40°C to +150°C.
Verify the specific suffix T3G against the official Microchip datasheet to confirm RoHS compliance and tape-and-reel packaging details. Ensure the SP-3 chassis footprint matches the target heatsink design. Cross-reference the part number with the latest product change notifications to account for any manufacturing updates or errata related to the SP1 to SP1F module package evolution.
Select this component when a dual N-channel arrangement is required for 600V applications. The 24mΩ Rds(on) offers low conduction losses compared to standard MOSFETs. Consider the 462W power dissipation rating for thermal design constraints. Verify that the ±20V gate-source voltage limits align with the intended driver output levels.
This module belongs to the Microchip CoolMOS SP series, designed for high-efficiency power conversion. It utilizes superjunction technology to reduce on-resistance while maintaining robust blocking capabilities. The SP-3 package facilitates direct mounting to cold plates or chassis structures, distinguishing it from smaller surface-mount alternatives.
APTC60SKM24T1G
The absolute maximum gate-source voltage is ±20V.
It is a dual N-channel MOSFET array.