APTC60DSKM24T3G

APTC60DSKM24T3G

$82.70
  • Description:MOSFET 2N-CH 600V 95A SP3
  • Series:CoolMOS™

SKU:e182435a0a98 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 600V 95A SP3
  • Series:CoolMOS™
  • Mfr:Microchip Technology
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N Channel (Dual Buck Chopper)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):600V
  • Current - Continuous Drain (Id) @ 25°C:95A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:14400pF @ 25V
  • Power - Max:462W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTC60DSKM24T3G

Overview

The APTC60DSKM24T3G is a dual N-channel CoolMOS SP3F power module manufactured by Microchip Technology. It features a silicon SJ-MOSFET technology housed in an SP-3 chassis mount package. The device provides a drain-source breakdown voltage of 600V and a continuous drain current of 95A. With a maximum on-state resistance of 24mΩ, it supports a pulsed drain current of 260A. The module dissipates up to 462W of power and operates within a temperature range of -40°C to +150°C.

Feature Summary

  • Dual N-channel configuration for bridge applications
  • CoolMOS SP3F technology for optimized switching performance
  • Chassis mount packaging for high-power thermal management

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • High-frequency inverters

Procurement Notes

Verify the specific suffix T3G against the official Microchip datasheet to confirm RoHS compliance and tape-and-reel packaging details. Ensure the SP-3 chassis footprint matches the target heatsink design. Cross-reference the part number with the latest product change notifications to account for any manufacturing updates or errata related to the SP1 to SP1F module package evolution.

Selection Notes

Select this component when a dual N-channel arrangement is required for 600V applications. The 24mΩ Rds(on) offers low conduction losses compared to standard MOSFETs. Consider the 462W power dissipation rating for thermal design constraints. Verify that the ±20V gate-source voltage limits align with the intended driver output levels.

Part Context

This module belongs to the Microchip CoolMOS SP series, designed for high-efficiency power conversion. It utilizes superjunction technology to reduce on-resistance while maintaining robust blocking capabilities. The SP-3 package facilitates direct mounting to cold plates or chassis structures, distinguishing it from smaller surface-mount alternatives.

Replacement Considerations

APTC60SKM24T1G

FAQ

What is the gate-source voltage limit?

The absolute maximum gate-source voltage is ±20V.

Is this a single or dual channel device?

It is a dual N-channel MOSFET array.

APTC60DSKM24T3GAPTC60DSKM24T3G
$82.70
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