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The APTC60HM24T3G is a Super Junction MOSFET module from Microchip Technology, housed in the SP-3 package. It features an N-channel configuration with a drain-source breakdown voltage of 600V and a continuous drain current rating of 95A. The device exhibits a maximum on-resistance of 24mΩ and supports gate-source voltages up to ±30V. With a threshold voltage of 2.1V, it operates within a temperature range of -40°C to +150°C and dissipates up to 462W of power.
Verify the specific suffix T3G against official Microchip documentation to confirm lead-free status and tape-and-reel packaging specifications. Ensure the SP-3 package variant matches the required thermal interface and mounting hardware for the target chassis application. Cross-reference the datasheet revision date to validate electrical parameter tolerances before finalizing component selection.
Select this module when high efficiency and low switching losses are critical for 600V applications. The Kelvin source terminal reduces gate loop inductance effects, improving switching performance. Consider the 24mΩ on-resistance for conduction loss calculations and verify that the 95A current rating aligns with peak load requirements under specified thermal conditions.
This component belongs to Microchip's CoolMOS SP3 family, designed for hard-switching applications. It integrates multiple N-channel dies into a single insulated module, providing robust performance in high-power density environments. The SP-3 package offers optimized thermal conductivity and electrical isolation for industrial and automotive power electronics.
Direct substitutes include other SP-3 packaged Super Junction MOSFET modules with comparable 600V ratings and similar on-resistance values. Verify pinout compatibility and thermal resistance characteristics when evaluating alternative part numbers from the same manufacturer or other vendors offering equivalent CoolMOS technologies.