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Product Detailed Parameters
- Description：MOSFET 4N-CH 600V 39A SP3
- Series：CoolMOS™
- Mfr：Microchip Technology
- Package：Tray
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：600V
- Current - Continuous Drain (Id) @ 25°C：39A
- Rds On (Max) @ Id, Vgs：70mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs：259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：700pF @ 25V
- Power - Max：250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Grade：-
- Qualification：-
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Overview
The APTC60HM70BT3G is a Power MOSFET module from Microchip Technology, utilizing CoolMOS SP3F technology. It features an N-channel silicon construction housed in the SP3-32 package with screw mount installation. The device supports a drain-source voltage of 700V and a continuous drain current of 60A at 25°C. Key electrical parameters include a maximum on-resistance of 70mΩ and a typical gate charge of 148nC. It operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Integrates CoolMOS SP3F technology for optimized switching performance and reduced conduction losses.
- Designed for direct mounting onto heat sinks to facilitate efficient thermal management.
- Features low thermal resistance characteristics to maintain stability during high-power operation.
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the specific suffix 'BT3G' against official Microchip documentation to confirm pinout configuration and tape-and-reel specifications. Ensure compatibility with required gate drive voltages and thermal interface materials. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust 700V blocking capability combined with low on-state resistance. Evaluate thermal requirements against the specified junction temperature limits. Confirm that the SP3-32 package dimensions align with the target PCB layout and heatsinking infrastructure for optimal mechanical integration.
Part Context
This module belongs to the APTC60HM series of discrete semiconductor modules. It shares the CoolMOS SP3F platform architecture with variants such as APTC60HM45SCTG and APTC60HM70RT3G. These components are engineered for high-efficiency power conversion, offering improved figure-of-merit compared to standard planar MOSFETs.
Replacement Considerations
Direct substitutes within the same series include APTC60HM70RT3G. Verify pin compatibility and thermal characteristics when considering alternative packages or voltage ratings from other manufacturers.
