APTC60HM70T1G

APTC60HM70T1G

  • Description:MOSFET 4N-CH 600V 39A SP1
  • Series:-

SKU:77783b4039a5 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 4N-CH 600V 39A SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):600V
  • Current - Continuous Drain (Id) @ 25°C:39A
  • Rds On (Max) @ Id, Vgs:70mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs:259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:7000pF @ 25V
  • Power - Max:250W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Grade:-
  • Qualification:-

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APTC60HM70T1G

Overview

The APTC60HM70T1G is a Power MOSFET module from Microchip Technology, utilizing CoolMOS SP3F technology. It features a Silicon (Si) construction and is housed in an SP3 package format within a tube. This component belongs to the discrete and power modules sub-category. The device is designed for high-performance switching applications requiring robust thermal management and low on-state resistance characteristics typical of the CoolMOS family.

Feature Summary

  • Integrates CoolMOS SP3F technology for optimized switching performance
  • Utilizes silicon-based semiconductor construction
  • Designed as a dedicated power MOSFET module

Applications

  • High-frequency power conversion systems
  • Industrial motor drive inverters
  • Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate differences in packaging or revision status. Confirm RoHS compliance details directly with the manufacturer's current datasheet. Ensure the ordering part number matches the required package type and technical specifications for your design integration.

Selection Notes

Select this module when CoolMOS SP3F technology is required for superior efficiency. Consider the SP3 package constraints for board layout and thermal dissipation requirements. Verify that the voltage and current ratings align with the specific application demands before finalizing the component choice.

Part Context

This component is part of Microchip Technology's broader portfolio of discrete and power modules. It falls under the MOSFET modules product line, specifically leveraging advanced silicon technologies. The module serves as a critical switching element in power electronics, distinct from IGBT modules like the APTGT series found in the same manufacturer catalog.

FAQ

What specific CoolMOS technology does this module utilize?

The APTC60HM70T1G utilizes CoolMOS SP3F technology.

Is this component an IGBT or a MOSFET?

It is a Power MOSFET module, not an IGBT.

What is the primary semiconductor material used?

The module is constructed using Silicon (Si) technology.

APTC60HM70T1GAPTC60HM70T1G

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