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The APTC60VDAM24T3G is a Super Junction MOSFET module from Microchip Technology, utilizing silicon technology. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 95A. The device offers an ultra-low on-resistance of 24 milliohms and operates within a temperature range of -40°C to +150°C. With a power dissipation rating of 416W, it employs screw mount installation in the SP-32 package. Key electrical characteristics include a gate-source voltage limit of ±30V and a threshold voltage of 2.1V.
Verify the specific suffix 'T3G' against official Microchip documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the ordering part number matches the exact thermal and electrical specifications required for your design. Cross-reference the datasheet revision history for any recent product change notifications that may affect mechanical dimensions or material composition prior to final procurement.
Select this component when high efficiency and low conduction losses are critical due to its 24 milliohm resistance. The Kelvin source terminal simplifies gate drive design by separating power and signal grounds. Consider the 95A current rating and 416W dissipation capacity for robust thermal management solutions. Verify compatibility with existing PCB layouts and screw-mount hardware constraints before integration.
This module belongs to the CoolMOS SP family, designed for high-performance power conversion. It integrates advanced Super Junction technology to minimize switching losses while maintaining high voltage blocking capability. The SP-32 package provides a compact form factor suitable for dense industrial applications requiring reliable thermal performance and electrical isolation.
APTC60HM35T3G: Higher on-resistance (35 milliohms), same package.
The maximum operating temperature is +150°C.
Yes, it features a Kelvin source for easier drive implementation.