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The APTC60VDAM45T1G is a silicon-based MOSFET module from Microchip Technology, utilizing the PM-MOSFET-COOLMOS-SP1 package. It features an interleaved PFC configuration and operates with a drain-source voltage of 600V. The module supports a continuous drain current of 38A and exhibits a typical on-resistance of 45mΩ. Designed for high-efficiency power conversion, it integrates Superjunction MOSFET technology within a robust SP1F-compatible form factor suitable for industrial applications.
Verify the specific suffix and package revision against the latest Microchip datasheet DS80001099 or relevant errata documents before procurement. Ensure compatibility with SP1F mounting requirements. Confirm RoHS compliance status via official product change notifications. Cross-reference ordering numbers with authorized distributors to avoid counterfeit components.
Select this module when interleaved PFC architecture is required for improved ripple cancellation and reduced component stress. The 45mΩ on-resistance offers a balance between conduction loss and switching performance. Consider the 38A current rating relative to thermal dissipation capabilities in the final enclosure design. Validate that the 600V voltage rating exceeds peak line voltages with adequate safety margin.
This component belongs to the PM-MOSFET-COOLMOS-SP1 family, designed for compact high-power density applications. It complements other modules like APTC60AM45T1G by offering specific interleaved configurations. The SP1 package standardizes mechanical integration across various Microchip power solutions, facilitating easier board layout and thermal interface management for engineers designing advanced power electronics.
Direct substitutes include APTC60AM45T1G and APTC60HM45T1G. Verify electrical parameter alignment and pinout compatibility before substitution. Review errata documents for any package clarification updates affecting mechanical fit or thermal characteristics.