APTC80H29T3G

Overview

The APTC80H29T3G is a silicon-based MOSFET module from Microchip Technology, utilizing the SP3 package configuration. It features a four-channel N-CH architecture designed for high-voltage applications. The device supports a maximum drain-source voltage of 800V and handles a continuous drain current of 15A. With a power dissipation rating of 156W, it is engineered for efficient thermal management in compact designs. The component operates within a temperature range of -55°C to 175°C, ensuring reliability under demanding conditions.

Feature Summary

• Four-channel N-CH MOSFET configuration for integrated power switching
• SP3 press-in PCB mounting technology for secure mechanical connection
• High voltage capability with 800V breakdown rating
• Optimized for low on-resistance and efficient thermal performance

Applications

• Industrial motor drives and control systems
• Power supply units requiring high-voltage isolation
• Automotive electronics and traction inverters
• Renewable energy inverter topologies

Procurement Notes

Verify the specific suffix 'T3G' against official Microchip documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure that the SP3 package footprint matches your PCB design requirements precisely. Cross-reference the datasheet for any recent product change notices or lifecycle status updates before finalizing procurement plans.

Selection Notes

Select this module when a compact, multi-channel solution is required for high-voltage DC bus applications. The SP3 package offers superior thermal conductivity compared to traditional through-hole options. Evaluate the 15A current rating against peak load requirements to ensure adequate margin. Consider the 800V rating for systems operating near or above standard 400V industrial levels.

Part Context

This component belongs to Microchip's CoolMOS SP3 series, which integrates advanced trench gate technology with optimized packaging. The SP3 format eliminates wire bonds, reducing parasitic inductance and improving switching speed. This series targets high-efficiency power conversion applications where size constraints and thermal density are critical design factors.

Replacement Considerations

No direct public substitute part numbers are confirmed in available documentation. Verify compatibility with existing gate drivers due to potential variations in threshold voltages and total gate charge characteristics across different MOSFET generations.