APTCV60TLM45T3G

Overview

The APTCV60TLM45T3G is a three-level inverter power module integrating Trench & Field Stop IGBT3 and CoolMOS™ technologies. It features Q2 and Q3 IGBTs with VCES of 600V and IC of 75A at Tc=80°C, alongside Q1 and Q4 CoolMOS™ transistors with VDSS of 600V and ID of 38A at Tc=80°C. The module includes CR5/CR6 diodes (600V, 30A) and CR7/CR8 diodes (1200V, 30A). Operating junction temperature ranges from -40°C to 175°C, with an operating case temperature up to 100°C. It utilizes the SP3 isolated package for direct heatsink mounting.

Feature Summary

• Integrates Trench + Field Stop IGBT3 technology for low voltage drop and soft recovery parallel diodes.
• Incorporates CoolMOS™ technology featuring ultra-low RDSon, low Miller capacitance, and avalanche energy rating.
• Includes Kelvin emitter connections to facilitate easy drive circuitry.
• Features an internal NTC thermistor for precise temperature monitoring.

Applications

• Solar converters
• Uninterruptible Power Supplies (UPS)
• Three-level inverters

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Microchip Technology documentation. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS standards as indicated in the datasheet. Validate that the SP3 package dimensions align with the intended mechanical design constraints before finalizing procurement orders.

Selection Notes

Select this module for applications requiring high integration within a three-level topology. Consider the thermal resistance values when designing the cooling system, noting the distinct RthJC for IGBTs versus MOSFETs. Evaluate the gate charge requirements against available driver capabilities. Verify that the continuous current ratings meet the peak load demands of the specific inverter application under expected case temperatures.

Part Context

This component belongs to the Microsemi (now Microchip Technology) portfolio of mixed-technology power modules. It combines legacy Microsemi IGBT expertise with CoolMOS™ MOSFET technology. The module is designed for high-efficiency power conversion systems where compact size and high switching frequencies are critical performance factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Microchip Technology documentation or authorized distributors for potential alternative components with matching electrical and mechanical specifications.

FAQ

What is the maximum operating junction temperature for the CoolMOS™ devices?

The maximum operating junction temperature for Q1 and Q4 (CoolMOS™) is limited to 150°C, while the overall module specification lists a range up to 175°C.

Does the module include protection against short circuits?

Yes, the IGBTs (Q2 & Q3) are rated for Short Circuit data with a withstand time of tp ≤ 6µs at VBus = 360V and Tj = 150°C.

How is the internal temperature monitored?

The module contains an integrated NTC thermistor with a nominal resistance of 50 kΩ at 25°C and a B-value of 3952 K.