APTGF100DA120T1G

APTGF100DA120T1G

$27.55
  • Description:IGBT MODULE 1200V 130A 735W SP1
  • Series:-

SKU:033cf54e8fb1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 130A 735W SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:3.7V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):130 A
  • Power - Max:735 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:6.5 nF @ 25 V

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APTGF100DA120T1G

Overview

The APTGF100DA120T1G is a non-punch-through (NPT) fast IGBT power module manufactured by Microchip Technology. It features an integrated boost chopper configuration with a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 100 A at a case temperature of 80°C. The device operates within a junction temperature range of -40°C to 150°C and utilizes the SP1 screw-mount package. Key electrical parameters include a maximum saturation voltage of 3.9 V, a gate threshold voltage between 4.5 V and 6.5 V, and a maximum power dissipation of 735 W at 25°C. The module incorporates an internal NTC thermistor for thermal monitoring.

Feature Summary

  • Non-Punch-Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
  • Soft recovery parallel diodes designed to minimize forward voltage and leakage current
  • Internal NTC thermistor integrated for precise temperature monitoring
  • Very low stray inductance architecture optimized for high-frequency switching applications

Applications

  • AC and DC motor control systems
  • Switched Mode Power Supplies (SMPS)
  • Power Factor Correction circuits
  • Boost chopper configurations

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm that the specific revision matches the required datasheet version. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Validate that the SP1 mounting torque specifications are strictly adhered to during assembly to maintain thermal performance and mechanical integrity.

Selection Notes

Select this module for applications requiring robust performance up to 50 kHz switching frequencies. Evaluate the thermal resistance characteristics against the specific heatsink requirements to ensure the junction temperature remains within the 150°C limit. Consider the 1200 V rating for compatibility with standard bus voltages. Verify that the gate drive circuitry can accommodate the specified threshold voltage range and leakage current limits.

Part Context

This component belongs to the Microchip Technology NPT IGBT power module family. It is part of the broader portfolio of discrete and module semiconductors designed for industrial power conversion. The SP1 packaging provides a standardized footprint for integration into various power electronic designs requiring isolated mounting capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 1200 V rating, 100 A current capacity, SP1 package dimensions, and NPT technology characteristics. Consult Microchip Technology directly for updated replacement recommendations.

FAQ

What is the maximum operating frequency supported by this module?

The module supports switching frequencies up to 50 kHz.

How is the internal temperature monitored?

Temperature monitoring is achieved via an integrated NTC thermistor located within the module.

What is the isolation voltage rating of the package?

The RMS isolation voltage from any terminal to the case is rated at 4000 V for one minute at 50/60 Hz.

APTGF100DA120T1GAPTGF100DA120T1G
$27.55
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