ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1200V 200A 961W SP4
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Configuration：Dual, Common Source
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 150A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：961 W
- Current - Collector Cutoff (Max)：350 µA
- Input Capacitance (Cies) @ Vce：10.2 nF @ 25 V
Download product information
Overview
The APTGF150DU120TG is a dual common source NPT IGBT power module manufactured by Microsemi. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 150 A at Tc = 80°C, with a pulsed current rating of 300 A. The device operates within a junction temperature range of -40°C to 150°C and includes an internal NTC thermistor for thermal monitoring. Packaged in the SP4 format, it provides an RMS isolation voltage of 4000 V between terminals and the case.
Feature Summary
- Non Punch Through (NPT) Fast IGBT technology providing low voltage drop and soft recovery parallel diodes
- Kelvin emitter configuration designed for easy drive circuit integration
- Symmetrical design with lead frames for power connections to minimize stray inductance
- Internal thermistor integrated for direct temperature monitoring
Applications
- AC Switches
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
Procurement Notes
Verify component authenticity through authorized Microsemi channels or certified distributors. Confirm datasheet revision status and check for Product Change Notifications prior to finalizing designs. Ensure handling procedures address electrostatic discharge sensitivity as specified in application note APT0502.
Selection Notes
Select this module for high-frequency operations up to 50 kHz due to its fast switching characteristics. Evaluate thermal management requirements against the 961 W maximum power dissipation limit. Consider the positive temperature coefficient of VCEsat when designing circuits requiring easy paralleling of multiple units.
Part Context
This component belongs to the Microsemi APTGF series of dual common source NPT IGBT modules. It utilizes trench field stop technology optimized for high efficiency. The SP4 package provides a standardized footprint for mounting on heatsinks using M5 screws with a torque specification between 2.5 and 4.7 N.m.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive voltages and thermal interface materials before considering alternative components from other manufacturers.
