APTGF180H60G

Overview

The APTGF180H60G is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 180 A at Tc = 80°C, with a pulsed current capacity of 630 A. The device operates within a junction temperature range of -40°C to 150°C and dissipates up to 833 W of power. Integrated soft-recovery diodes exhibit a forward voltage of 1.6 V at 200 A. The module utilizes an SP6 package with screw mounting and provides an isolation voltage of 4000 Vrms.

Feature Summary

• Non-Punch Through (NPT) Fast IGBT technology designed for low voltage drop and minimal tail current.
• Integrated soft recovery parallel diodes characterized by low forward voltage and leakage current.
• Kelvin emitter configuration included to facilitate easy gate drive circuitry.
• Symmetrical design with M5 power connectors engineered for very low stray inductance.

Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control systems

Procurement Notes

Verify the specific revision level against official documentation before procurement. Confirm that the SP6 package dimensions and mounting torque specifications align with the mechanical constraints of the target heatsink assembly. Ensure electrostatic discharge handling procedures are strictly followed during component installation.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Verify that the gate drive circuit can supply the necessary total gate charge without exceeding the maximum gate-emitter voltage limits. Assess the operating frequency capabilities relative to the switching energy losses at the intended load currents.

Part Context

This component belongs to the Microsemi APTGF series of full-bridge IGBT modules. It is specifically engineered for high-frequency operation up to 100 kHz. The module integrates four IGBTs and four diodes into a single isolated package suitable for direct mounting to heatsinks.

Replacement Considerations

Cross-reference alternative full-bridge IGBT modules with matching 600 V ratings and comparable current capacities. Verify compatibility of the SP6 package outline and terminal configurations with existing PCB layouts or busbar designs.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Does the module include Kelvin emitters?

Yes, the module includes Kelvin emitters to facilitate easy gate drive connections.

What is the RMS isolation voltage?

The RMS isolation voltage between any terminal and the case is 4000 V.