APTGF200U120DG

Overview

The APTGF200U120DG is a single-switch NPT IGBT power module with integrated series diodes, manufactured by Microsemi. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 275 A at Tc=25°C. The device utilizes an SP6 isolated package for direct heatsink mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 3.7 V at 200 A, and a maximum power dissipation of 1136 W. The junction-to-case thermal resistance is 0.11 °C/W for the IGBT and 0.23 °C/W for the diode.

Feature Summary

• Non-Punch Through (NPT) FAST IGBT technology providing low voltage drop and soft recovery parallel diodes.
• Kelvin emitter configuration designed to facilitate easy drive circuit integration.
• Symmetrical design with M5 power connectors engineered to achieve very low stray inductance.
• Positive temperature coefficient of VCE(sat) enabling stable temperature behavior and easy paralleling.

Applications

• Zero Current Switching resonant mode converters
• High frequency operation circuits up to 50 kHz
• Industrial power conversion systems

Procurement Notes

Verify component authenticity through authorized Microsemi distributors or official channels. Confirm datasheet revision status prior to implementation. Ensure electrostatic discharge handling procedures are strictly followed during assembly. Validate that the specific ordering suffix matches the required package and terminal configuration for the target application.

Selection Notes

Select this module for applications requiring high-frequency switching capabilities up to 50 kHz. Consider the 1200 V rating and 275 A continuous current capacity for robust industrial loads. Evaluate the SP6 package dimensions and M5 mounting requirements against the mechanical constraints of the heatsink interface. Assess thermal management needs based on the specified junction-to-case thermal resistance values.

Part Context

This component belongs to the Microsemi NPT IGBT power module family, specifically designed for high-performance power electronics. It integrates a single IGBT switch with a series-connected anti-parallel diode within a unified isolated package. The product line emphasizes ruggedness and high-frequency operation suitable for demanding industrial environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing driver circuits and thermal interfaces when considering alternative components from other manufacturers.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to 150°C.

How does the device handle reverse bias conditions?

The module includes RBSOA and SCSOA ratings, supporting a Reverse Bias Safe Operating Area of 400A at 1200V with a junction temperature of 150°C.

What isolation voltage does the package provide?

The SP6 package provides an RMS isolation voltage of 4000 V between any terminal and the case for 1 minute at 50/60Hz.