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Product Detailed Parameters
- Description：IGBT MODULE 600V 65A 250W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：NPT
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.2 nF @ 25 V
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Overview
The APTGF50H60T3G is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 50 A at a case temperature of 80°C. The device has a maximum power dissipation of 250 W and operates within a junction temperature range of -40°C to 150°C. It utilizes an SP3 package with screw mounting and includes an integrated internal thermistor for temperature monitoring.
Feature Summary
- Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop, low tail current, and switching frequencies up to 50 kHz.
- Soft recovery parallel diodes characterized by low forward voltage and low leakage current.
- Kelvin emitter configuration designed for easy drive circuit integration.
- Internal thermistor included for precise temperature monitoring.
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control
Procurement Notes
Verify the component revision level against the latest datasheet documentation before procurement. Confirm that the SP3 package dimensions align with the mechanical constraints of the target heatsink interface. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly to prevent damage to the sensitive semiconductor components.
Selection Notes
Select this module for applications requiring high-frequency operation up to 50 kHz. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the specified 250 W power dissipation. Consider the positive temperature coefficient of VCE(sat) when designing circuits that require paralleling legs to achieve higher phase leg current capabilities.
Part Context
This component belongs to the APTGF series of full-bridge NPT IGBT modules from Microchip Technology. It shares the SP3 isolated package form factor with other devices in the family but is distinguished by its specific 600V voltage rating and 50A continuous current capacity. The module integrates both IGBTs and anti-parallel diodes into a single unit.
Replacement Considerations
Direct substitutes include the APTGT50H60T3G and APTGT50H60RT3G. Verify that the replacement part maintains the same SP3 package outline and electrical ratings to ensure compatibility with existing PCB layouts and thermal management systems.
FAQ
What is the function of the internal thermistor?
The internal thermistor provides temperature monitoring capabilities for the module, allowing for active thermal protection and management within the application circuit.
How does the Kelvin emitter benefit the drive circuit?
The Kelvin emitter separates the gate drive return path from the main power current path, reducing stray inductance effects and ensuring stable gate voltage control during switching transitions.
What is the maximum operating frequency for this module?
The module supports switching frequencies up to 50 kHz, enabled by its NPT fast IGBT technology and soft recovery parallel diodes.
