APTGF50TL60T3G

Overview

The APTGF50TL60T3G is a three-level inverter NPT IGBT power module manufactured by Microsemi Corporation. It features a chassis mount SP3 package and is rated for a maximum collector-emitter voltage of 600V with a continuous collector current of 65A. The module dissipates up to 250W of power and utilizes THUNDERBOLT IGBT technology designed for high-frequency operation.

Feature Summary

• Three-level inverter topology utilizing Non-Punch Through (NPT) architecture
• THUNDERBOLT IGBT G1 technology providing low voltage drop and low tail current
• Soft recovery parallel diodes with low forward voltage and leakage current
• Kelvin emitter connection for simplified gate drive circuitry

Applications

• Three-level inverters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Procurement Notes

Verify the specific manufacturer designation, as sourcing data references both Microsemi and Microsemi Corporation. Confirm the SP3 package type and chassis mount configuration match the application requirements. Ensure the component meets the required thermal management specifications for the 250W dissipation rating.

Selection Notes

Select this module for applications requiring high switching frequencies up to 100 kHz and stable temperature behavior. The symmetrical design and very low stray inductance make it suitable for demanding power conversion environments where performance at high frequency is critical.

Part Context

This component belongs to the Microsemi THUNDERBOLT IGBT family, which emphasizes outstanding performance in high-frequency operations. The NPT structure ensures robust avalanche energy ratings and reliable soft short-circuit operation across the operating temperature range.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.