APTGL475DA120D3G

Overview

The APTGL475DA120D3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 950 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.1 V and a power dissipation rating of 3600 W. It operates within a junction temperature range of -40°C to +175°C and uses the D3-11 screw-mount package.

Feature Summary

• High-power density design with trench field-stop IGBT technology
• Extended operating junction temperature up to 175°C
• Integrated anti-parallel fast recovery diode for inductive loads

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm mechanical dimensions against the target heatsink interface. Ensure gate drive requirements match the specified electrical limits. Check for recent product change notifications regarding manufacturing sites or materials.

Selection Notes

Select this component for high-current applications requiring robust thermal performance. Compare the 950 A current rating against peak load demands. Evaluate the D3-11 package compatibility with existing PCB or busbar layouts. Consider the 175°C junction capability for derating calculations in high-ambient environments.

Part Context

This part belongs to the APTGL series of high-voltage IGBT modules from Microchip Technology. The series utilizes advanced trench field-stop architecture to optimize switching losses and conduction characteristics. It is designed for demanding power conversion applications where reliability and high current handling are critical.

Replacement Considerations

Direct substitutes include the APTGL475DA120T3G and APTGL475DA120D3. Verify pinout compatibility and thermal resistance values before substitution.