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The APTGL60DH120T3G is a Trench Field Stop asymmetrical bridge IGBT module manufactured by Microsemi Corporation. It features a 1200 V collector-emitter breakdown voltage and supports a continuous collector current of 80 A at case temperature. The device has a maximum power dissipation of 280 W and utilizes the SP3 chassis mount package. Key electrical characteristics include a saturation voltage of 2.05 V and a gate-emitter leakage current of 120 nA. The component operates within a junction temperature range of -40°C to 150°C.
Verify part authenticity through authorized distributors as the component status is obsolete. Confirm package integrity and check for electrostatic discharge sensitivity during handling. Review latest datasheets for any design-in warnings or application notes referenced by the manufacturer. Ensure compatibility with existing thermal interface materials and mounting hardware specifications.
Select this module for applications requiring high voltage isolation and efficient switching in compact spaces. Consider the SP3 package dimensions for mechanical integration. Evaluate thermal resistance requirements against system heat sinks. Compare saturation voltage and switching losses against alternative IGBT technologies for efficiency optimization in specific duty cycles.
This component belongs to Microsemi's high-voltage discrete and module portfolio, specifically designed for power electronics. It represents the Trench Field Stop series, which offers improved switching characteristics compared to standard planar devices. The SP3 package is widely used in medium-power industrial inverters and converter topologies.
Public confirmed substitute part numbers are not available in the provided documentation. As the part status is obsolete, engineers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.