APTGL60H120T3G

$67.12

Description：IGBT MODULE 1200V 80A 280W SP3
Series：-

SKU:f1553fe96c3e Category: IGBT Modules Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 80A 280W SP3
Series：-
Mfr：Microchip Technology
Package：Bulk
IGBT Type：Trench Field Stop
Configuration：Full Bridge
Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 50A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP3
Supplier Device Package：SP3
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Power - Max：280 W
Current - Collector Cutoff (Max)：250 µA
Input Capacitance (Cies) @ Vce：2.77 nF @ 25 V

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APTGL60H120T3G

Overview

The APTGL60H120T3G is a TRENCH4 silicon IGBT module manufactured by Microchip Technology. It features a full bridge configuration housed in an SP3F package with screw mount installation. The device supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 80 A at 25°C, reducing to 60 A at case temperatures of 80°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter leakage current of 600 nA, and a power dissipation rating of 280 W. The module operates within a temperature range of -40°C to +100°C and has a maximum gate-emitter voltage of 20 V.

Feature Summary

Integrates TRENCH4 IGBT technology for optimized switching performance
Provides a compact full bridge topology suitable for space-constrained designs
Utilizes the SP3F package format for standardized thermal management

Applications

Industrial motor drives
Inverter systems
Power supply units

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly from Microchip Technology before procurement. Confirm that the SP3F package dimensions match the target PCB layout and heatsink interface requirements. Ensure that the gate drive circuitry is compatible with the specified 20 V maximum gate-emitter voltage limits to prevent device damage during operation.

Selection Notes

Select this component when a 1200 V rated full bridge configuration is required for high-power applications. Consider the 80 A continuous current capability at 25°C and the 1.85 V saturation voltage for efficiency calculations. Evaluate the thermal resistance characteristics associated with the SP3F package to ensure adequate heat sinking solutions are available for the intended operating environment.

Part Context

This part belongs to the Microchip Technology IGBT modules category, specifically utilizing TRENCH4 silicon technology. It is designed as a discrete power module for robust industrial applications. The product line emphasizes reliability and performance in medium to high-power conversion scenarios, offering a standardized footprint for integration into various power electronic architectures.