APTGLQ100DA120T1G

Overview

The APTGLQ100DA120T1G is a single IGBT module manufactured by Microchip Technology, utilizing silicon Trench Field Stop technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 170 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.05 V and a power dissipation rating of 520 W. It operates within a temperature range of -40°C to +125°C and employs a screw mount SP1 package configuration.

Feature Summary

• Incorporates Trench Field Stop technology for low voltage drop and reduced tail current
• Features Kelvin emitter connection to facilitate easy gate drive circuitry
• Designed with low stray inductance architecture for stable thermal behavior

Applications

• Boost chopper circuits
• Industrial motor drives
• Power conversion systems

Procurement Notes

Verify the specific suffix 'T1G' against official Microchip documentation to confirm package type and pinout compatibility. Confirm RoHS compliance status through the manufacturer's latest product data sheet. Ensure the SP1 chassis mount interface matches the target system requirements before finalizing procurement orders.

Selection Notes

Select this component when high voltage blocking capability and robust current handling are required. The TFS technology offers improved switching characteristics compared to standard planar designs. Evaluate the thermal management needs relative to the 520 W dissipation rating and ensure adequate heatsinking for the specified operating temperature range.

Part Context

This part belongs to the APTGLQ series of IGBT modules from Microchip Technology. It represents a discrete power semiconductor solution designed for medium to high-power applications. The module integrates fast-switching capabilities suitable for demanding industrial environments requiring reliable power control.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.