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The APTGLQ200A120T3AG is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology and housed in an SP3F screw-mount package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 400 A at 25°C. The saturation voltage is specified at 2.05 V, with a gate-emitter leakage current of 480 nA. Maximum power dissipation reaches 12.5 kW, while the gate-emitter voltage limit is 20 V. The device operates within a temperature range of -40°C to +125°C and weighs approximately 110 g.
Verify the specific suffix 'AG' against official Microchip documentation to confirm compliance status and material composition. Confirm the SP3F package dimensions match the target PCB or heatsink interface requirements before integration. Ensure that the 1.2 kV rating aligns with the system's peak voltage stresses.
Select this component when a dual IGBT configuration is required for high-current applications up to 400 A. The 1.2 kV rating makes it suitable for medium-voltage industrial systems. Consider the SP3F package size and screw-mount installation method during mechanical design. Verify that the thermal management solution can handle the 12.5 kW dissipation capability if operating near limits.
This part belongs to the APTGLQ series of IGBT modules from Microchip Technology. It shares the SP3F packaging format with other high-power devices in the lineup but is distinguished by its dual configuration and 1.2 kV voltage rating. The series is designed for robust industrial performance.
Direct substitutes may include other Microchip dual IGBT modules in the SP3F package with similar voltage and current ratings, such as variants within the APTGLQ family. Cross-brand replacements require careful verification of pinout compatibility, thermal resistance, and electrical characteristics.