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Product Detailed Parameters
- Description：IGBT MODULE 650V 70A 175W
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Dual Boost Chopper
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：175 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：3.1 nF @ 25 V
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Overview
The APTGLQ50DDA65T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP1 package. It features a dual boost chopper configuration with trench field-stop technology. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V at 50 A, a power dissipation rating of 175 W, and a gate-emitter leakage current of 50 µA. The module operates within a junction temperature range of -40°C to +175°C and utilizes screw mount installation.
Feature Summary
- Dual boost chopper topology for efficient power conversion
- Trench field-stop IGBT technology for high-speed switching
- Integrated NTC thermistor for thermal monitoring
Applications
- DC-DC converter circuits
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix T3G against official Microchip documentation to confirm packaging details. Ensure the SP1 footprint matches the target PCB design. Cross-reference the datasheet revision history for any recent parameter updates or pinout changes before finalizing procurement orders.
Selection Notes
Select this component when a dual boost chopper configuration is required within a compact SP1 module form factor. The 650 V rating suits medium-voltage DC applications. Verify that the 175 W power dissipation capability aligns with the system's thermal management strategy and that the 70 A current rating meets peak load requirements.
Part Context
This part belongs to the APTGLQ50 series of high-speed IGBT modules from Microchip Technology. It shares the SP1 mechanical housing and trench field-stop technology with other variants in the lineup, such as the APTGLQ50H65T1G, but differs in internal circuit configuration to support dual boost applications rather than full bridge or asymmetric topologies.
Replacement Considerations
Direct replacements must match the SP1 package, 650 V rating, and dual boost configuration. Evaluate alternatives like the APTGLQ50H65T1G only if the application can accommodate a full bridge topology instead of a dual boost structure. Verify thermal resistance and pin compatibility before substitution.
