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Product Detailed Parameters
- Description：IGBT MODULE 650V 70A 175W SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP3F
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：175 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：3.1 nF @ 25 V
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Overview
The APTGLQ50H65T3G is a silicon-based IGBT power module manufactured by Microchip Technology. It features a full bridge configuration with Trench + Field Stop technology, rated for a maximum collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.85 V and a power dissipation capacity of 175 W. It operates within a junction temperature range of -40°C to +175°C and utilizes an SP1 screw-mount package.
Feature Summary
- Integrates high-speed Trench + Field Stop IGBT4 technology for efficient switching performance.
- Provides electrical isolation between the base plate and internal circuitry for safe mounting.
- Includes an integrated NTC thermistor for accurate thermal monitoring.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm exact electrical characteristics and pinout compatibility. Confirm RoHS compliance status through the manufacturer's datasheet or environmental declaration before integration into regulated equipment designs.
Selection Notes
Select this component when a 650 V rating and 70 A continuous current capability are required in a compact SP1 footprint. Ensure the application design accommodates the specified 175 W power dissipation and verify that the operating junction temperature remains within the -40°C to +175°C range during peak loads.
Part Context
This module belongs to the APTGLQ series of high-speed IGBT power modules from Microchip Technology. The series utilizes advanced trench gate field-stop technology to optimize switching losses and conduction voltage, targeting applications requiring high efficiency and reliability in power conversion systems.
Replacement Considerations
Cross-reference with other SP1 packaged full-bridge IGBT modules offering 650 V and similar current ratings. Verify pin-to-pin compatibility and thermal resistance specifications before substituting to ensure mechanical and electrical integrity in existing layouts.
FAQ
What type of semiconductor technology does the APTGLQ50H65T3G utilize?
It uses Silicon (Si) based Trench + Field Stop IGBT4 technology.
Is there thermal monitoring capability included in the module?
Yes, the module includes an integrated NTC thermistor for thermal sensing.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
