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The APTGLQ600A65T6G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6 package with screw mount installation. It features a dual configuration and operates within a junction temperature range of -40°C to +100°C. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V, a continuous collector current of 770 A at 25°C, and a collector-emitter saturation voltage of 1.85 V. The module supports a power dissipation of 2 kW, with a gate-emitter leakage current of 1 uA and a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the SP6 package dimensions and terminal configurations match the intended PCB or busbar layout. Ensure that the thermal interface material selection aligns with the specified maximum junction temperature limits to maintain reliable operation under load conditions.
Select this component when a dual IGBT module with 650 V blocking capability and high current handling is required. The SP6 package offers a compact footprint suitable for space-constrained designs. Verify that the system's cooling solution can effectively manage the 2 kW power dissipation while maintaining the junction temperature within the specified operational range of -40°C to +100°C.
This part belongs to Microchip Technology's IGBT module portfolio, specifically utilizing the SP6C mechanical form factor. It is designed for medium-to-high power switching applications where reliability and thermal performance are critical. The module integrates two IGBT chips in a single package to simplify circuit design and reduce interconnection parasitics compared to discrete solutions.
Direct replacements must match the SP6 package, 650 V rating, and dual configuration. Evaluate alternative modules from the same family or competitors with identical pinouts and thermal characteristics to ensure compatibility without redesigning the host system.