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The APTGLQ75H65T1G is a silicon-based IGBT power module manufactured by Microchip Technology. It features a full bridge configuration within the SP1-12 package, designed for screw mount installation. The device supports a maximum collector-emitter voltage (VCEO) of 650 V and delivers a continuous collector current of 100 A at 25°C. The saturation voltage is rated at 1.85 V, with a maximum power dissipation of 250 W. Gate-emitter leakage current is specified at 200 nA, and the gate-emitter voltage limit is 20 V. Operating temperatures range from -40°C to +100°C.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Request original datasheets and material compliance documentation prior to purchase. Confirm lot traceability and RoHS status to ensure alignment with project specifications and regulatory requirements.
Select this module for applications requiring a 650 V rating and 100 A continuous current capacity. Ensure thermal management solutions accommodate the 250 W power dissipation limit. Verify that the operating environment remains within the specified -40°C to +100°C temperature range for reliable operation.
This component belongs to the Microchip APTGLQ series of IGBT modules. These devices utilize trench field-stop technology for improved switching characteristics. The SP1-12 package is commonly used in medium-power industrial electronics, offering a balance between electrical performance and mechanical integration ease.
Direct substitutes include other Microchip APTGLQ series modules with matching voltage and current ratings. Cross-brand replacements require verification of pin compatibility, thermal resistance, and switching parameters against the original datasheet specifications.