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The APTGT100A60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features a half-bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 340 W. Gate-emitter leakage current is specified at 400 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C.
Verify the specific suffix T1G against official Microchip documentation to confirm exact manufacturing lot attributes and compliance status. Confirm the SP1-12 package dimensions match the target thermal interface design. Ensure the 600V rating aligns with system voltage requirements including transient spikes.
Select this component when a 150A half-bridge solution is required within the SP1-12 form factor. Compare the 1.5V saturation voltage against alternative packages if lower conduction losses are critical. Verify that the 340W power dissipation capability meets the thermal management constraints of the intended enclosure.
This part belongs to the APTGT series of trench field-stop IGBT modules. It shares the SP1-12 package family with other variants like the APTGT150A60T1G, which offers higher current capacity. The series utilizes silicon technology optimized for industrial power conversion efficiency.
The APTGT150A60T1G serves as a direct pin-compatible upgrade within the same SP1-12 package, offering increased current handling. Verify thermal resistance differences between the 100A and 150A variants before substitution.