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The APTGT100DA120T1G is a Microchip Technology IGBT module utilizing PM-IGBT-TFS-SP1 packaging. It features a dual configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 150 A at 25°C. The saturation voltage is specified at 1.7 V, with a power dissipation rating of 340 W. Operating within a temperature range of -40°C to +100°C, it employs screw mount installation and silicon technology.
Verify the specific suffix T1G against official Microchip documentation to confirm package type and electrical characteristics. Ensure compatibility with SP1 mounting standards. Confirm that the integrated NTC thermistor meets system thermal sensing requirements. Cross-reference datasheet parameters for saturation voltage and current ratings before integration.
Select this component for applications requiring a 1200 V rated dual IGBT module with integrated thermal sensing. The SP1 package supports screw mounting, suitable for robust industrial environments. Evaluate the 150 A continuous current rating against peak load demands. Consider the operating temperature range and power dissipation limits for thermal design.
This part belongs to the Microchip APTGT series of high-speed IGBT modules. It utilizes advanced trench gate technology for improved switching performance. The module integrates both IGBT and diode elements in a single package, facilitating compact power electronics designs.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout and thermal resistance compatibility if considering alternative manufacturers.