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The APTGT100DA60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features a half-bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 340 W, while the maximum gate-emitter voltage is 20 V. The module operates within a temperature range of -40°C to +100°C.
Verify the specific suffix T1G against official Microchip documentation to confirm packaging and material compliance details. Cross-reference the SP1-12 package designation with manufacturer drawings to ensure mechanical compatibility with existing heatsink interfaces. Confirm RoHS status through the latest datasheet revision before finalizing procurement specifications.
Select this component when a 600 V half-bridge IGBT module is required for moderate power applications. Ensure the system design accommodates the 150 A continuous current rating and 340 W power dissipation limits. Verify that the operating junction temperature remains within the specified -40°C to +100°C range during all operational conditions.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. It shares core electrical characteristics with other variants in the family but differs in package type and internal configuration. The SP1-12 housing distinguishes it from larger modules like the SP3 or D3 series designed for higher current capacities.
Direct substitutes include other Microchip APTGT series modules with identical 600 V ratings and compatible pinouts. Verify mechanical dimensions and thermal resistance values when considering alternative packages such as SP1-6 or SP1-12 variants from different manufacturers.