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The APTGT100TL60T3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 400 nA. With a power dissipation rating of 480 W, it operates within a junction temperature range of -40°C to +100°C. The component is housed in an SP6 package with screw mount installation.
Verify the specific suffix T3G against official Microchip documentation to confirm pinout compatibility and internal circuit topology. Ensure the SP6 package dimensions match the target heatsink interface. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement specifications.
Select this component when a single IGBT with 600V blocking capability and 150A continuous current is required. The SP6 package offers a balance between current handling and physical footprint. Verify that the thermal management system can dissipate up to 480W while maintaining the junction temperature within the specified operational limits.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. The series utilizes advanced trench field-stop technology to enhance efficiency. The APTGT100TL60T3G specifically provides a single switch configuration, distinguishing it from half-bridge or three-phase variants within the same voltage and current class.
Consult Microchip's official cross-reference guides for verified substitutes. Direct replacements must maintain identical voltage ratings, current capabilities, and package form factors to ensure mechanical and electrical compatibility.