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The APTGT150A120G is a dual IGBT power module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 220 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 400 nA. Rated for a power dissipation of 690 W, it operates within a temperature range of -40°C to +125°C. The module employs screw mount installation and is housed in the SP4 package configuration.
Verify the specific suffix 'G' against official Microchip documentation to confirm RoHS compliance status and exact manufacturing lot details. Ensure the ordering quantity aligns with manufacturer minimum order requirements, as distributor listings may vary. Confirm the SP4 package dimensions match your mechanical design constraints before finalizing procurement.
Select this component when a dual IGBT configuration with 1200 V blocking capability is required. The 220 A continuous current rating supports moderate to high-power loads. Verify that the SP4 package and screw-mount interface are compatible with your heatsink and PCB layout. Compare the 1.7 V saturation voltage against alternative modules to ensure optimal conduction loss performance for your specific duty cycle.
This part belongs to the Microchip APTGT series of insulated gate bipolar transistor modules. These modules are designed for general-purpose power switching applications requiring reliable performance under high voltage and current conditions. The series utilizes advanced silicon technology to balance switching speed and conduction losses.
Direct replacements include the APTGT150A120TG, which shares identical electrical specifications but may differ in packaging or suffix designation. Verify pinout compatibility and thermal resistance values before substituting any alternative module from the same product family.