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Product Detailed Parameters
- Description：IGBT MODULE 600V 225A 480W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 150A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：225 A
- Power - Max：480 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：9.2 nF @ 25 V
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Overview
The APTGT150A60T1G is a silicon-based IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features a dual configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 225 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 480 W, while the maximum gate-emitter voltage is 20 V. The module operates within a temperature range of -40°C to +100°C and weighs approximately 80 g.
Feature Summary
- Dual IGBT configuration for bridge circuit applications
- SP1-12 screw-mount package design
- Silicon trench field-stop technology
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Inverter systems
Procurement Notes
Verify the specific datasheet revision and manufacturing date code upon order confirmation. Confirm that the SP1-12 package dimensions match the target PCB or heatsink layout requirements. Ensure thermal interface materials are compatible with the module's baseplate specifications for optimal heat transfer performance during operation.
Selection Notes
Select this component when a 600 V rating and 225 A current capacity are required in a dual configuration. The SP1-12 package is suitable for screw-mount installations where moderate power density is needed. Compare the 1.5 V saturation voltage against system efficiency targets and ensure the 480 W power dissipation rating aligns with the available cooling infrastructure.
Part Context
This part belongs to the Microchip APTGT series of high-voltage power modules. These modules utilize trench field-stop technology to optimize switching performance and conduction losses. The series offers various configurations including single, dual, and three-phase arrangements across different voltage ratings and packages.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SP1-12 package family. Verify that any substitute maintains the 600 V voltage rating and comparable current handling capabilities. Ensure thermal resistance characteristics remain similar to avoid redesigning the cooling solution.
