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Product Detailed Parameters
- Description：IGBT MODULE 1200V 280A 890W SP6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：280 A
- Power - Max：890 W
- Current - Collector Cutoff (Max)：350 µA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The APTGT200A120G is a single IGBT module from Microchip Technology, utilizing Trench Field Stop technology in an SP6 package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 280 A at 25°C. The saturation voltage is 1.7 V, with a power dissipation rating of 890 W. Operating temperatures range from -40°C to +100°C, and it supports screw mounting.
Feature Summary
- Integrates Trench Field Stop IGBT technology for optimized switching performance.
- Designed for high-power applications requiring robust thermal management.
- Provides reliable operation within extended industrial temperature ranges.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP6 package dimensions and screw mounting requirements align with your mechanical design constraints. Ensure thermal interface materials are compatible with the module's heat sink surface specifications to maintain optimal thermal performance.
Selection Notes
Select this component for designs requiring a single-channel IGBT solution with 1.2 kV blocking capability. The 280 A continuous current rating suits medium-to-high power density applications. Consider the SP6 package size and screw-mount configuration for PCB or chassis integration. Evaluate thermal resistance requirements against the 890 W dissipation limit to ensure adequate heatsinking.
Part Context
This module belongs to Microchip’s IGBT module portfolio, leveraging advanced trench field stop architecture. It serves as a power switching element in various energy conversion systems. The SP6 packaging standardizes mechanical integration for specific thermal and electrical interfaces within the manufacturer's broader product line.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology for direct replacements or cross-reference options based on specific electrical and mechanical compatibility requirements.
FAQ
What is the gate-emitter voltage rating?
The maximum gate-emitter voltage is ±20 V.
Is the device lead-free?
Yes, the component is RoHS compliant.
