APTGT200DH60G

Overview

The APTGT200DH60G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP6C package. It features a dual configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 430 A at 25°C. The saturation voltage is 1.4 V, while power dissipation reaches 1.15 kW. Operating temperatures range from -40°C to +100°C, with a maximum gate-emitter voltage of 20 V and leakage current of 500 nA.

Feature Summary

• Dual IGBT configuration for bridge circuit applications
• High thermal performance with 1.15 kW power dissipation capability
• Robust mechanical design using screw mount installation style

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Inverter systems

Procurement Notes

Verify the exact suffix against official Microchip documentation to confirm pinout and electrical specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before integration into regulated equipment designs.

Selection Notes

Select this component when a 600 V rating and high current capacity are required in a compact SP6C form factor. Ensure the application can accommodate the specified 1.4 V saturation voltage and that the thermal management system supports the 1.15 kW dissipation limit within the operating temperature range.

Part Context

This part belongs to the APTGT series of power modules, which utilizes Trench Field Stop technology. The SP6C package provides a standardized footprint for high-power industrial applications, distinguishing it from single-chip or smaller multi-chip variants within the broader product line.

Replacement Considerations

Direct substitutes include other Microchip dual IGBT modules in the SP6C package with matching 600 V ratings, such as the APTGT300DH60G, provided the higher current rating does not necessitate different thermal constraints.