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The APTGT20H60T3G is a single IGBT power module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.5 V and a maximum power dissipation of 45 W. It operates within a temperature range of -40°C to +100°C and uses the SP1-12 package with screw mount installation.
Verify the specific suffix against official Microchip documentation to confirm exact electrical characteristics and pinout compatibility. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before procurement.
Select this component for applications requiring 600V blocking capability with moderate current handling up to 20A. Ensure the thermal management solution supports the 45W power dissipation rating within the specified operating temperature range.
This part belongs to the APTGT series of insulated gate bipolar transistor modules from Microchip Technology. The series utilizes trench field-stop technology to optimize switching performance and conduction losses for industrial power electronics applications.
Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and thermal specifications when considering equivalent parts from other manufacturers.