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The APTGT20X60T3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology and the SP-3 package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device has a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. Power dissipation is rated at 176 W, with an operating temperature range from -40°C to +175°C. The module supports screw mount installation and has a maximum gate-emitter voltage of 20 V.
Verify the manufacturer designation carefully, as the component is produced by Microchip Technology following historical acquisitions. Confirm the specific suffix T3G against official datasheets to ensure correct pinout and electrical characteristics. Request RoHS compliance documentation directly from the supplier or authorized distributor to meet regulatory requirements.
Select this module for applications requiring a single switch with 600V blocking capability and 80A current handling. Ensure the cooling solution can manage the 176W power dissipation rating. Verify that the drive circuit provides the required 20V gate-emitter limit. Compare thermal resistance values against system constraints to maintain safe operating junction temperatures.
This component belongs to the APTGT series of trench field-stop IGBT modules. These devices are designed for high-efficiency power conversion. The SP-3 package offers a standardized footprint for easy integration into existing PCB layouts and heatsink assemblies common in industrial power electronics designs.
Direct replacements include APTGT50X60T3G and APTGT30X60T3G from the same manufacturer family. Verify current ratings and thermal performance when substituting. Cross-reference pinouts and mounting hole patterns to ensure mechanical compatibility.