APTGT300DA170G

Overview

The APTGT300DA170G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 400 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 600 nA. Maximum power dissipation is rated at 1.66 kW, with an operating temperature range from -40°C to +100°C. The module employs screw mount installation within an SP6 package.

Feature Summary

• Single configuration IGBT module designed for high-voltage applications
• SP6 package format supporting screw mount installation
• Silicon-based construction for robust power switching

Applications

• High-power industrial motor drives
• Medium voltage variable frequency drives
• Industrial inverter systems

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP6 package dimensions and terminal configurations match the target mechanical design requirements. Ensure thermal interface materials are compatible with the specified operating temperature range and mounting torque specifications.

Selection Notes

Select this component when a single-switch topology requires 1.7 kV blocking capability with 400 A continuous current handling. The SP6 package offers a balance between current capacity and physical footprint for screw-mount implementations. Evaluate thermal management solutions to maintain junction temperatures within the +100°C maximum limit under full load conditions.

Part Context

This part belongs to the Microchip APTGT series of high-voltage IGBT modules. The series provides various voltage ratings and current capacities packaged in standardized formats like SP6 and D3-11. These modules are engineered for reliability in demanding power electronics environments, offering consistent performance across the product line.