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The APTGT300DU120G is a dual IGBT power module manufactured by Microchip Technology, designed for high-power switching applications. It features a 1.2 kV collector-emitter voltage rating and supports a continuous collector current of 280 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.7 V and a maximum power dissipation of 890 W. Operating within a temperature range of -40°C to +100°C, it utilizes silicon technology and is housed in an SP6 screw-mount package with a dual common source configuration.
Verify the specific revision level against the manufacturer's latest datasheet before procurement, as component specifications may evolve. Confirm that the SP6 package dimensions align with the target heatsink interface requirements. Ensure gate drive circuits are compatible with the specified voltage limits to prevent device damage during operation.
Select this module when a dual IGBT configuration is required for 1.2 kV systems with moderate current demands around 280 A. Consider the 890 W power dissipation limit relative to the available cooling capacity. Evaluate the SP6 package footprint against existing PCB or busbar layouts to ensure mechanical compatibility without requiring custom adapters.
This component belongs to the Microchip APTGT series of IGBT modules, which are engineered for robust performance in demanding power electronics environments. The series offers various voltage and current ratings to accommodate different system architectures. The APTGT300DU120G specifically addresses applications needing reliable switching at 1.2 kV with a compact dual configuration.
Direct replacements must match the 1.2 kV rating, 280 A current capacity, and SP6 package form factor. Verify pinout compatibility for the dual common source configuration. Cross-reference with other Microchip APTGT variants or equivalent industry-standard modules ensuring identical thermal and electrical characteristics.