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The APTGT300TL65G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 400 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 800 nA. Power dissipation is rated at 935 W. It operates within a temperature range of -40°C to +100°C and accepts a maximum gate-emitter voltage of 20 V. The component is housed in an SP6 screw-mount package and weighs 110 g.
Verify the specific ordering suffix and revision level against the official Microchip Technology datasheet before procurement. Confirm that the SP6 package dimensions and terminal configurations match the target thermal management and PCB layout requirements. Ensure compliance with RoHS directives as specified in the manufacturer documentation.
Select this component when a 650 V rating and 400 A continuous current capacity are required. Consider the 1.5 V saturation voltage for conduction loss calculations. Verify that the operating environment stays within the -40°C to +100°C range. Compare thermal resistance values from the datasheet against the heatsink design to ensure adequate heat dissipation for the 935 W power dissipation rating.
This part belongs to the Microchip Technology IGBT module family, specifically designed for power electronics. It shares the SP6 package form factor with other variants in the series, such as the APTGT400TL65G, which offers higher current ratings. The module integrates a single IGBT chip for efficient power switching in compact industrial enclosures.
The APTGT400TL65G is a compatible alternative within the same package offering higher current capacity. For lower current requirements, verify if other SP6 variants meet the electrical specifications while maintaining pin compatibility.