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The APTGT400DA60D3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology and housed in the D3-11 package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 500 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 1.25 kW. Gate-emitter leakage current is specified at 400 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +125°C, and it supports screw mount installation.
Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm RoHS compliance status via official datasheets before integration. Ensure proper handling procedures are followed due to sensitivity to electrostatic discharge during assembly processes.
Select this module for applications requiring 600 V blocking capability and high current handling up to 500 A. Evaluate thermal interface materials to maintain junction temperature within the specified -40°C to +125°C operating range. Consider the D3-11 package dimensions for mechanical fitment and screw mounting requirements.
This component belongs to the APTGT series of IGBT modules from Microchip Technology. It represents a specific variant within the PM-IGBT-TFS-D3 product line, distinguished by its single configuration and 600 V voltage rating. The D3-11 package provides a standardized form factor for industrial power electronics designs.
Consult official Microchip Technology documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, package type, and thermal characteristics to ensure functional compatibility.