SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT50A170TG is a Trench Field Stop (TFS) IGBT module manufactured by Microchip Technology. It features a dual configuration housed in an SP4 chassis mount package. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a saturation voltage of 2 V, power dissipation of 312 W, and a gate-emitter leakage current of 600 nA. The module operates within a temperature range of -40°C to +100°C and utilizes silicon technology.
Verify the specific suffix 'TG' against official Microchip documentation to confirm exact pinout and thermal interface specifications. Ensure that the SP4 mounting requirements align with the target application's mechanical constraints. Cross-reference the datasheet for precise thermal resistance values to validate heat sink design adequacy before procurement.
Select this component for applications requiring high voltage blocking capability up to 1.7 kV. The 75 A current rating suits moderate power density designs. Consider the TFS technology benefits for reduced switching losses compared to standard field-stop variants. Evaluate the SP4 package dimensions against available board space and cooling infrastructure.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. It represents a discrete power semiconductor solution designed for medium-power industrial applications. The series emphasizes reliability and efficiency through advanced trench field stop architecture, distinguishing it from older planar or standard field-stop technologies.
Public confirmed substitute part numbers are not available in the provided source material.