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The APTGT50DDA120T3G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 75 A at 25°C. The saturation voltage is specified at 1.7 V, with a power dissipation capability of 277 W. The device operates within a temperature range of -40°C to +100°C and uses an SP4 screw-mount package. Gate-emitter leakage is limited to 400 nA, and the maximum gate-emitter voltage is 20 V.
Verify the exact part number suffix against official Microchip documentation to ensure correct specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Check for any specific handling requirements related to the SP4 package during installation. Ensure compatibility with existing thermal interface materials for the screw-mount configuration.
Select this component for applications requiring a 1.2 kV rating with 75 A continuous current capacity. Consider the 277 W power dissipation limit when designing heat sinking solutions. Verify that the operating temperature range meets the environmental requirements of the target system. Compare the SP4 package dimensions against available board space or chassis mounting constraints.
This module belongs to the APTGT series of IGBT modules from Microchip Technology. The series utilizes trench field-stop technology for improved performance. The SP4 package is designed for screw-mount installation in industrial power electronics. This specific variant offers a balance of voltage rating and current handling for medium-power applications.
Direct substitutes may include other Microchip APTGT series modules with similar electrical ratings and SP4 packaging. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with equivalent offerings from other manufacturers only if mechanical and electrical parameters match exactly.